Opto table of contents

PHOTOSENSORS- Silicon

Part Number	GEOMETRY	PARAMETER	CONDITION	MIN	MAX	UNIT
FTPD-1240 DIE 40 X 40 mils SILICON PHOTO DIODE		Dark Current	V R =10V, H=0mw/cm 2	-	10	hA
		Reverse Breakdown Voltage	I R=100µA, H=0mw/cm 2	33	-	V
		Light Current	V R=5V, , H=5mw/cm 2	5	-	m A
		Rise/fall time	V CE=3V, R L=50 Ω, l P =905nm	20	-	h s
FTPD-1072 DIE 72 X 72 mils SILICON PHOTO DIODE		Dark Current	V R =5V, H=0mw/cm 2	-	30	h A
		Reverse Breakdown Voltage	I R=5µA, H=0mw/cm 2	30	-	h A
		Light Current	V R=5V, , H=5mw/cm 2	18	-	m A
		Turn On/Off Time	V CE=3V, R L=50 Ω, l P =880nm	-	40	h s
FTPD-0140B DIE 40 X 40 mils SILICON PHOTO TRANSISTOR		Collector Dark Current	V CE =3V, H=0mw/cm 2	-	100	h A
		Collector-Emitter Breakdown V	I C=100µA, I B=0	10	-	V
		Emitter-Collector Breakdown V	I E=100µA, I B=0	3	-	V
		Forward Current Gain	V CE =5V, I C=1mA	500	1000	hFE
FTPT-0124C DIE 24 X 24 mils SILICON PHOTO TRANSISTOR		Collector Dark Current	V CE =20V, H=0mw/cm 2		100	h A
		Collector-Emitter Breakdown V	I C=100µA, I B=0	30	100	V
		Emitter-Collector Breakdown V	I E=100µA, I B=0	6.5	-	V
		Forward Current Gain	V CE =5V, I C=2mA	500	1000	hFE
FTPT-140DA T0-18 SILICON PHOTO TRANSISTOR	200 mil dia	Collector Dark Current	V CE =10V, H=0mw/cm 2	-	100	h A
		Collector-Emitter Breakdown V	I C=100µA, I B=0	30	-	V
		Emitter-Collector Breakdown V	I E=100µA, I B=0	5	-	V
		On-State Collector Current	V CE =5V, H=0.5mw/cm 2	0.45	-	mA
FTPT-140FA T0-18 SILICON PHOTO TRANSISTOR	200 mil dia	Collector Dark Current	V CE =10V, H=0mw/cm 2	-	100	h A
		Collector-Emitter Breakdown V	I C=100µA, I B=0	30	-	V
		Emitter-Collector Breakdown V	I E=100µA, I B=0	5	-	V
		On-State Collector Current	V CE =5V, H=5mw/cm 2	0.3	-	mA

OPTOCOUPLERS -Surface mount

Part Number	PACKAGE	PARAMETER	CONDITION	MIN	MAX	UNIT
FTO-2400U Transistor Output 4 Pin LCC Optocoupler	150 X 220mils	On-State Collector Current	V CE =5V, I F=2mA	0.15	-	mA
		On-State Collector Current	V CE =5V, I F=10mA	2.5	-	mA
		Resistance (Input-Output)	V I-O = +1000VDC	10 11	-	W
		Rise/fall time	V CE =10V, R L =100 Ω, I F =10mA	15	-	m s
FTO-2420U Transistor Output 4 Pin LCC Optocoupler	150 X 220mils	On-State Collector Current	V CE =5V, I F=2mA	0.4	-	mA
		On-State Collector Current	V CE =5V, I F=10mA	10	-	mA
		Resistance (Input-Output)	V I-O = +1000VDC	10 11	-	W
		Rise/fall time	V CE =10V, R L =100 Ω, I F =10mA	20	-	m s
FTO-1216U Transistor Output 4 Pin LCC Optocoupler	150 X 220mils	On-State Collector Current	V CE =5V, I F=1.5mA	6	-	mA
		On-State Collector Current	V CE =5V, I F=3mA	12	-	mA
		Resistance (Input-Output)	V I-O = +1000VDC	10 11	-	W
		Rise/fall time	V CE =10V, R L =100 Ω, I F =10mA	20	-	m s
FTO-1221U Transistor Output 4 Pin LCC Optocoupler	150 X 220mils	On-State Collector Current	V CE =5V, I F=1.5mA	6	-	mA
		On-State Collector Current	V CE =5V, I F=3mA	12	-	mA
		Resistance (Input-Output)	V I-O = +1000VDC	10 11	-	W
		Rise/fall time	V CE =10V, R L =100 Ω, I F =10mA	20	-	m s
FTO-5C75U Darlington Output 4 Pin LCC Optocoupler	150 X 220mils	On-State Collector Current	V CE = 5V, I F = 1mA	10	-	mA
		On-State Collector Current	V CE =5V, I F=2mA	20	-	mA
		Resistance (Input-Output)	V I-O = +1000VDC	10 11	-	W
		Rise/fall time	V CC = 5V, I C = 8mA, R L = 100 W	20	-	m s
FTO-4N47U Transistor Output 4 Pin LCC Optocoupler	170 X 245 mils	On-State Collector Current	V CE =5V, I F=1mA	0.5	-	mA
		On-State Collector Current	V CE =5V, I F=2mA	0.75	-	mA
		Resistance (Input-Output)	V I-O = +1000VDC	10 11	-	W
		Rise/fall time	V CC = 5V, I C = 8mA, R L = 100 W	20	-	m s
FTO-4N48U Transistor Output 4 Pin LCC Optocoupler	170 X 245 mils	On-State Collector Current	V CE =5V, I F=1mA	1.0	5	mA
		On-State Collector Current	V CE =5V, I F=2mA	1.5	-	mA
		Resistance (Input-Output)	V I-O = +1000VDC	10 11	-	W
		Rise/fall time	V CE=3V, R L=50 Ω, l P =905nm	20	-	m s
FTO-4N49U Transistor Output 4 Pin LCC Optocoupler	170 X 245 mils	On-State Collector Current	V CE =5V, I F=1mA	2.0	10	mA
		On-State Collector Current	V CE =5V, I F=2mA	3.0	-	mA
		Resistance (Input-Output)	V I-O = +1000VDC	10 11	-	W
		Rise/fall time	V CE=3V, R L=50 Ω, l P =905nm	25		m s

OPTOCOUPLERS- TO5

P/N	PACKAGE	PARAMETER	CONDITION	MIN	MAX	UNIT
FTO-4N47 Transistor Output 6 Pin T0-5 Optocoupler	330 mil dia	On-State Collector Current	VCE =5V, IF=1mA	0.5	-	mA
		On-State Collector Current	VCE =5V, IF=2mA	0.75	-	mA
		Resistance (Input-Output)	VI-O =+1000VDC	10 11	-	W
		Rise/fall time	VCC = 5V, IC = 8mA, RL = 100 W	20	-	m s
FTO-4N48 Transistor Output 6 Pin T0-5 Optocoupler	330 mil dia	On-State Collector Current	VCE =5V, IF=1mA	1.0	5	mA
		On-State Collector Current	VCE =5V, IF=2mA	1.5	-	mA
		Resistance (Input-Output)	VI-O =+1000VDC	10 11	-	W
		Rise/fall time	VCE=3V, RL=50Ω, l P=905nm	20	-	m s
FTO-4N49 Transistor Output 6 Pin T0-5 Optocoupler	330 mil dia	On-State Collector Current	V CE =5V, I F=1mA	2.0	10	mA
		On-State Collector Current	V CE =5V, I F=2mA	3.0	-	mA
		Resistance (Input-Output)	V I-O = +1000VDC	10 11	-	W
		Rise/fall time	V CE=3V, R L=50 Ω, l P =905nm	25	-	m s

OPTOCOUPLERS- TO18

Part /umber	PACKAGE	PARAMETER	CONDITION	MIN	MAX	UNIT
FTO-3N243 TransistorOutput 4 Pin T0-18 Optocoupler	200 mil dia	On-State Collector Current	V CE =10V, I F=3mA	0.3	-	mA
		On-State Collector Current	V CE =10V, I F=10mA	1.5	-	mA
		Resistance (Input-Output)	V I-O = +1000VDC	10 9	-	W
		Rise/fall time	V CE =10V, R L =100 Ω, I F =10mA	10	-	m s
FTO-3N244 Transistor Output 4 Pin T0-18 Optocoupler	200 mil dia	On-State Collector Current	V CE =10V, I F=3mA	0.8	-	mA
		On-State Collector Current	V CE =10V, I F=10mA	3.0	-	mA
		Resistance (Input-Output)	V I-O = +1000VDC	10 9	-	W
		Rise/fall time	V CE =10V, R L =100 Ω, I F =10mA	10	-	m s
FTO-3N245 Transistor Output 4 Pin T0-18 Optocoupler	200 mil dia	On-State Collector Current	V CE =10V, I F=3mA	1.5	-	mA
		On-State Collector Current	V CE =10V, I F=10mA	6.0	-	mA
		Resistance (Input-Output)	V I-O = +1000VDC	10 9	-	W
		Rise/fall time	V CE =10V, R L =100 Ω, I F =10mA	10	-	m s
FTO-3N261 Transistor Output 4 Pin T0-18 Optocoupler	200 mil dia	On-State Collector Current	V CE =5V, I F=1.0mA	0.5	-	mA
		On-State Collector Current	V CE =5V, I F=2.0mA	0.75	-	mA
		Resistance (Input-Output)	V I-O = +1000VDC	10 9	- -	W
		Rise/fall time	V CC = 10V, I C = 5mA, R L = 100 W	20	-	m s
FTO-3N262 Transistor Output 4 Pin T0-18 Optocoupler	200 mil dia	On-State Collector Current	V CE =5V, I F=1.0mA	1.0	5.0	mA
		On-State Collector Current	V CE =5V, I F=2.0mA	1.5	-	mA
		Resistance (Input-Output)	V I-O = +1000VDC	10 9	-	W
		Rise/fall time	V CC = 10V, I C = 5mA, R L = 100 W	20	-	m s
FTO-3N263 Transistor Output 4 Pin T0-18 Optocoupler	200 mil dia	On-State Collector Current	V CE =5V, I F=1.0mA	5.0	10	mA
		On-State Collector Current	V CE =5V, I F=2.0mA	7.0	-	mA
		Resistance (Input-Output)	V I-O = +1000VDC	10 9	-	W
		Rise/fall time	V CC = 10V, I C = 5mA, R L = 100 W	25	-	m s
FTO-5C75 Transistor Output 6 Pin T0-5 Optocoupler	200 mil dia	On-State Collector Current	V CE =5V, I F=2mA	20	-	mA
		Off-State Collector Current	V CE =50V, I F=0mA		1	m A
		Resistance (Input-Output)	V I-O = +500VDC	10 8	-	W
		Rise/fall time	V CC = 5V, I C = 8mA, R L = 100 W	70	-	m s
FTO-3C91 Transistor Output 6 Pin T0-5 Optocoupler	200 mil dia	On-State Collector Current	V CE =5V, I F=10mA	4	-	mA
		On-State Collector Current	V CE = 0.4V, I F = 10mA	3	20	mA
		Resistance (Input-Output)	V I-O = +500VDC	10 9	-	W
		Rise/fall time	V CE = 5V, I F = 2mA, R L = 100 W	20	-	m s
FTO-3C92 Transistor Output 6 Pin T0-5 Optocoupler	200 mil dia	On-State Collector Current	V CE =5V, I F=10mA	4	-	mA
		On-State Collector Current	V CE = 0.4V, I F = 10mA	3	20	mA
		Resistance (Input-Output)	V I-O = +500VDC	10 9	-	W
		Rise/fall time	V CE = 5V, I F = 2mA, R L = 100 W	20	-	m s

GENERIC TX SCREENING

TEST	MIL-STD-750 TEST METHOD	TX	SAMPLE SIZE
Temperature Cycle	Method 1051	X	100%
Constant Acceleration	Method 2006	X	100%
Fine Leak Test	Method 1071, Cond. H	X	100%
Gross Leak Test	Method 1071, Cond. C	X	100%
HTRB Diodes Transistors Optocouplers	Method 1038 Method 1039 N/A	X X -	100% 100% N/A
Electrical Test	EmCor Datasheet or SCD	X	100%
Burn-In Diodes Transistors Optocouplers	Method 1038 Method 1039 Method 1038 or 1039	X X X	100% 100% 100%
Final Electrical Test	EmCor Datasheet or SCD	X	100%
PDA%_______		X	(PDA = 10%)
External Visual	Method 2071		10(0)

NOTES:

“X” indicates required testing. Tests other than those indicated by the “X” requested by a customer should be called out at time of quote as a separate line item.

Generic TX Group A (OPTIONAL)

TEST (NOTE A)	MIL-STD-750 TEST METHOD	TX	LOT<2k5 SAMPLE SIZE	LOT>2k5 SAMPLE SIZE
Group A-2 DC Static Test @ 25 ° C	(NOTE B) FT Datasheet or SCD	X	76 (0)	45 (0)
Group A-3 DC Static Test @ Maximum Rated Temperature DC Static Test @ Minimum Rated Temperature	(NOTE B) FORCE Datasheet or SCD FORCE Datasheet or SCD	X X	45 (0) 45 (0)	22 (0) 22 (0)
Group A-4 Dynamic Tests @ 25 ° C	FORCE Datasheet or SCD	X	76 (0)	45 (0)

NOTES:

The specific parameters to be included for tests in each subgroup shall be as specified in the applicable device specification sheet or SCD (test document).
If a device in the sample fails one or more test(s) in the subgroup(s) being sampled, each device in the (sub) lot represented by the sample shall be screened for the test(s) for which the sample failed. An alternate test method (for A3 or A4 only) to remove the failure mode may be used after an Engineering evaluation is performed. A second sample (first resubmittal) using double the large lot sample size shall be tested to the failed parameter. If the second sample fails, the lot shall be screened to the failed test(s) and a third sample (second resubmittal) using double the large lot sample size shall be tested to the failed parameter or the lot shall be rejected.

Generic Hi-Rel Environmental Screening

TEST	MIL-STD-883 TEST METHOD	SAMPLE SIZE
Temperature Cycle	Method 1010	100%
Constant Acceleration	Method 2001, Y1 Only	100%
Fine Leak	Method 1014	100%
Gross Leak	Method 1014	100%
Pre-Burn In Test	FORCE Datasheet or Customer SCD	100%
Power Burn-In	Method 1015	100%
Final Electrical	FORCE Datasheet or Customer SCD	100%
PDA%_______	.	10%
External Visual	Method 2009	10 (0)

Generic Hi-Rel Group A (OPTIONAL)

TEST	MIL-STD-883 TEST METHOD	LOT<2k5 SAMPLE SIZE	LOT>2k5 SAMPLE SIZE
Group A-1 Static Test @ +25 ° C	FORCE Datasheet or SCD	116 / 0	45 (0)
Group A-2 Static Test @ Maximum Rated Temperature	FORCE Datasheet or SCD	45 / 0	22 (0)
Group A-3 Static Test @ Minimum Rated Temperature	FORCE Datasheet or SCD	45 / 0	22 (0)
Group A-4 Dynamic Test @ +25 ° C	FORCE Datasheet or SCD	116 / 0	45 (0)
Group A-9 Switching Test @ +25 ° C	FORCE Datasheet or SCD	116 / 0	45 (0)

NOTES:

Sampling : When the required sample size exceeds the lot size, 100 percent inspection will be performed.
Sequence of test : Group A testing by subgroup or within subgroups may be performed in any sequence after subgroup 1 is performed.
Group A Testing : Group A testing is performed only when requested by purchase order.